Saboda ƙarancin sinadarin moissanite na halitta, yawancin silicon carbide an yi shi ne da roba. Ana amfani da shi azaman abin gogewa, kuma kwanan nan a matsayin na'urar kwaikwayo ta semiconductor da lu'u-lu'u mai ingancin dutse mai daraja. Mafi sauƙin tsarin kera shi ne haɗa yashi na silica da carbon a cikin tanda mai juriya ga wutar lantarki ta Acheson graphite a zafin jiki mai yawa, tsakanin 1,600 °C (2,910 °F) da 2,500 °C (4,530 °F). Ana iya canza ƙananan ƙwayoyin SiO2 a cikin kayan shuka (misali bawon shinkafa) zuwa SiC ta hanyar dumama da carbon mai yawa daga kayan halitta. Haƙarƙarin silica, wanda shine samfurin samar da ƙarfe na silicon da ƙarfe na ferrosilicon, ana iya canza shi zuwa SiC ta hanyar dumama da graphite a 1,500 °C (2,730 °F).
F12-F1200, P12-P2500
0-1mm, 1-3mm, 6/10, 10/18, raga 200, raga 325
Ana iya bayar da wasu takamaiman bayanai idan an buƙata.
| Grit | Sic | FC | Fe2O3 |
| F12-F90 | ≥98.50 | <0.20 | ≤0.60 |
| F100-F150 | ≥98.00 | <0.30 | ≤0.80 |
| F180-F220 | ≥97.00 | <0.30 | ≤1.20 |
| F230-F400 | ≥96.00 | <0.40 | ≤1.20 |
| F500-F800 | ≥95.00 | <0.40 | ≤1.20 |
| F1000-F1200 | ≥93.00 | <0.50 | ≤1.20 |
| P12-P90 | ≥98.50 | <0.20 | ≤0.60 |
| P100-P150 | ≥98.00 | <0.30 | ≤0.80 |
| P180-P220 | ≥97.00 | <0.30 | ≤1.20 |
| P230-P500 | ≥96.00 | <0.40 | ≤1.20 |
| P600-P1500 | ≥95.00 | <0.40 | ≤1.20 |
| P2000-P2500 | ≥93.00 | <0.50 | ≤1.20 |
| Gurasa | Yawan Yawa (g/cm3) | Yawan Yawa (g/cm3) | Gurasa | Yawan Yawa (g/cm3) | Yawan Yawa (g/cm3) |
| F16 ~ F24 | 1.42~1.50 | ≥1.50 | F100 | 1.36~1.45 | ≥1.45 |
| F30 ~ F40 | 1.42~1.50 | ≥1.50 | F120 | 1.34~1.43 | ≥1.43 |
| F46 ~ F54 | 1.43~1.51 | ≥1.51 | F150 | 1.32~1.41 | ≥1.41 |
| F60 ~ F70 | 1.40~1.48 | ≥1.48 | F180 | 1.31~1.40 | ≥1.40 |
| F80 | 1.38~1.46 | ≥1.46 | F220 | 1.31~1.40 | ≥1.40 |
| F90 | 1.38~1.45 | ≥1.45 |
Idan kuna da wasu tambayoyi. Da fatan za ku iya tuntuɓar mu.